Three separate research teams have reported techniques that directly attack one of the hardest problems in shrinking transistors and wiring below 10 nanometers: the sharp rise in electrical resistance ...

Researchers developed a dual-modulated vertically stacked transistor that eliminates current leakage at nanoscale channel lengths, advancing low-power 3D chip integration.

STMicroelectronics’ EVSTDRVG611MC gallium-nitride (GaN) motor-control reference design for appliances and industrial drives handles more than 600W without a heatsink, ensuring a compact outline and ...

Researchers at UCLA have discovered a way to dramatically improve how electrical current enters perovskite semiconductors, an ...

You don't need the newest GPUs to save money on AI; simple tweaks like "smoke tests" and fixing data bottlenecks can slash ...